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新型碳化硅 SiC 晶体管问世，可在 600℃ 高温下工作_我的网站

一 |      8 月 25 日消息，科技媒体 Tom's Hardware 昨日（8 月 24 日）发布博文，报道称京都大学研究团队研发出新型碳化硅（SiC）晶体管，采用标准离子注入工艺制造，可在 600℃（873 K）下工作。    Chinese President Xi Jinping on Monday called for learning from late leader Jiang Zemin's firmness in political conviction.    Xi, also general secretary of the Communist Party of China (CPC) Central Committee and chairman of the Central Military Commission, made the remarks at a grand gathering held at the Great Hall of the People in commemoration of the birth centenary of Jiang.    Jiang had remained unswervingly firm in communist ideals, utterly loyal to the Party and the people, and resolutely committed to the cause of the Party and the people, said Xi.    The late leader had emphasized the importance of strengthening the Party's leadership and effectively improving Party building as the country advanced reform and opening up and developed its economy, he added.    On the new journey, it is imperative to uphold the overall leadership of the Party and the centralized, unified leadership of the CPC Central Committee, unswervingly strengthen the full and rigorous Party self-governance, and ensure the Party remains the strong leadership core in the cause of socialism with Chinese characteristics, said Xi.                    。援引博文介绍，该晶体管采用商业芯片工厂普遍使用的“离子注入”（ion implantation）工艺打造，相关成果于 8 月 17 日发表在《APL Electronic Devices》。研究团队选择“结型场效应晶体管”（JFET）结构，并将栅极置于沟道下方，形成底栅（bottom-gate）布局。

二 | 离子注入过程中，部分掺杂原子会沿晶体通道深入目标区域之外，形成“沟道效应”尾部。

三 | 传统顶栅结构难以补偿这一影响，导致设计阈值电压与实测值相差超过 2 V。

四 | 底栅结构可捕获偏离预定深度的掺杂原子，让该偏差在 400℃ 下缩小至 0.1 V 以内。该科研团队为了减少高温漏电，团队还加入“双阱”（double-well）隔离结构。该结构通过 pn 结隔离单个器件，避免依赖下方半绝缘碳化硅衬底。

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Published on:02:18:40